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U.S.-Europe Conference on Wide Bandgap Semiconductor Technology
for Next Generation Electronic and Photonic Devices

Table of Contents

 

  1. Introduction
    Vladimir Dmitriev, TDI, Inc.

  2. SiC growth and processing technology
    Michael G. Spencer, Cornell University

  3. Progress and issues in SiC technology
    Vladimir Dmitriev, TDI, Inc.

  4. High voltage SiC power switching devices
    T. Paul Chow, Rensselaer Polytechnic Institute

  5. Application and operation of high voltage, high current Si-IGBT / SiC diode modules
    Heinz Lendenmann, ABB Corporate Research

  6. GaN-based materials research in Europe
    Steven DenBaars, University of California, Santa Barbara

  7. Application of pressure grown GaN substrates to epitaxy
    Sylwester Porowski, High Pressure Research Center, PAS

  8. GaN-based electronic device research in Europe
    Michael Shur, Rensselaer Polytechnic Institute

  9. Wide bandgap microwave power devices
    Christian Brylinski, Thomson CSF

  10. High temperature electronic packaging in Europe
    George White, Georgia Institute of Technology

  11. Ohmic contacts, packages and packaging for high power and high temperature SiC devices
    Roumen Kakanakov, Institute of Applied Physics, BAS