Sponsor: NSF

Conference on Wide Band Gap Semiconductor Technology for Next Generation Electronic and Photonic Devices

Sponsor: ONR

The following viewgraphs are from the presentations given by the TTEC panel members and Japanese guests at the Conference on Wide Band Gap Semiconductor Technology for Next Generation Electronic and Photonic Devices on December 7-8, 1998. These slides represent interim results from the study, and as such are subject to change. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the United States Government, the authors' parent institutions, or Loyola College.

To reserve a copy of the final report at pre-publication prices or for more information on these studies, please send email to Trina Foley: tfoley@itri.loyola.edu

VIEWGRAPHS

TABLE OF CONTENTS

  1. High-quality epitaxial growth of SiC and doping control (Hiroyuki Matsunami, Kyoto University)
  2. SiC growth and doping (Vladimir Dmitriev, TDI, Inc. and Howard University)
  3. Seeded sublimation bulk crystal growth of SiC (Noboru Ohtani, Nippon Steel)
  4. Status of Japan and U.S. GaN materials technology (Steven DenBaars, Univ. of California, Santa Barbara)
  5. Issues for making high performance GaN-based FETs (Hiroji Kawai, Sony Corp.)
  6. Nitride electronic devices (Michael Shur, Rensselaer Polytechnic Institute)
  7. Devices and processes for SiC Power applications (Katsunori Ueno, Fuji Electric)
  8. High-temperature, high-voltage SiC power switching devices (T. Paul Chow, Rensselaer Polytechnic Institute)
  9. Progress on the national project "R&D on Combustion Control Systems for Energy Conservation" (Toshitake Nakata, SiC Semicon Co.)
  10. A review of high temperature, high power SiC electronics in the U.S. and Japan (R. Chris Clarke, Northrop Grumman)